IndiumV3, Main, Repository, bibRecord, 003757

THz generation from InN films due to destructive interference between optical rectification and photocurrent surge

Identifieur interne : 003757 ( Main/Repository ); précédent : 003756; suivant : 003758

THz generation from InN films due to destructive interference between optical rectification and photocurrent surge

Auteurs : RBID : Pascal:10-0090389

Descripteurs français

Pascal (Inist)
- Rectification optique, Source rayonnement, Optique non linéaire, Etude expérimentale, Epitaxie jet moléculaire, Méthode MOCVD, Croissance cristalline, Domaine fréquence THz, Polarisation optique, Matériau optique, Composé binaire, Indium Nitrure, 0757H, InN, 8115, 4265, 4270N.

English descriptors

KwdEn :
- Binary compounds, Crystal growth, Experimental study, Indium Nitrides, MOCVD, Molecular beam epitaxy, Nonlinear optics, Optical materials, Optical polarization, Optical rectification, Radiation sources, THz range.

Abstract

We have investigated the characteristics of THz generation including the dependence of the output power and polarization on the incident angle and pump polarization from two series of InN films grown by plasma-assisted molecular beam epitaxy (PAMBE) and metal organic chemical vapor deposition (MOCVD), respectively. Following the analyses of our results, we have attributed the mechanism of the THz generation from these InN samples to the destructive interference between optical rectification and photocurrent surge. Under the average intensity of 176 W cm-² for the subpicosecond laser pulses at 782 nm, the THz output powers were measured to be as high as 2.4 μW from the 220 nm InN film, with the output frequencies spanning the band from 300 GHz to 2.5 THz.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 004A05

Links to Exploration step

Pascal:10-0090389

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">THz generation from InN films due to destructive interference between optical rectification and photocurrent surge</title>
<author><name>GUIBAO XU</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, Lehigh University</s1>
<s2>Bethlehem, PA 18015</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Bethlehem, PA 18015</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Ding, Yujie J" uniqKey="Ding Y">Yujie J. Ding</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, Lehigh University</s1>
<s2>Bethlehem, PA 18015</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Bethlehem, PA 18015</wicri:noRegion>
</affiliation>
</author>
<author><name>HONGPING ZHAO</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, Lehigh University</s1>
<s2>Bethlehem, PA 18015</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Bethlehem, PA 18015</wicri:noRegion>
</affiliation>
</author>
<author><name>GUANGYU LIU</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, Lehigh University</s1>
<s2>Bethlehem, PA 18015</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Bethlehem, PA 18015</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Jamil, Muhammad" uniqKey="Jamil M">Muhammad Jamil</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, Lehigh University</s1>
<s2>Bethlehem, PA 18015</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Bethlehem, PA 18015</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Tansu, Nelson" uniqKey="Tansu N">Nelson Tansu</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, Lehigh University</s1>
<s2>Bethlehem, PA 18015</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Bethlehem, PA 18015</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Zotova, Ioulia B" uniqKey="Zotova I">Ioulia B. Zotova</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>ArkLight, PO Box 2</s1>
<s2>Center Valley, PA 18034</s2>
<s3>USA</s3>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Center Valley, PA 18034</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Stutz, Charles E" uniqKey="Stutz C">Charles E. Stutz</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB</s1>
<s2>OH 45433</s2>
<s3>USA</s3>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>11 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><region type="state">Ohio</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Diggs, Darnell E" uniqKey="Diggs D">Darnell E. Diggs</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB</s1>
<s2>OH 45433</s2>
<s3>USA</s3>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>11 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><region type="state">Ohio</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Fernelius, Nils" uniqKey="Fernelius N">Nils Fernelius</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB</s1>
<s2>OH 45433</s2>
<s3>USA</s3>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>11 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><region type="state">Ohio</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Ken Hopkins, F" uniqKey="Ken Hopkins F">F. Ken Hopkins</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB</s1>
<s2>OH 45433</s2>
<s3>USA</s3>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>11 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><region type="state">Ohio</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Gallinat, Chad S" uniqKey="Gallinat C">Chad S. Gallinat</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Materials Department, University of California</s1>
<s2>Santa Barbara, CA 93106</s2>
<s3>USA</s3>
<sZ>12 aut.</sZ>
<sZ>13 aut.</sZ>
<sZ>14 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Santa Barbara, CA 93106</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Koblm Ller, Gregor" uniqKey="Koblm Ller G">Gregor Koblm Ller</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Materials Department, University of California</s1>
<s2>Santa Barbara, CA 93106</s2>
<s3>USA</s3>
<sZ>12 aut.</sZ>
<sZ>13 aut.</sZ>
<sZ>14 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Santa Barbara, CA 93106</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Speck, James S" uniqKey="Speck J">James S. Speck</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Materials Department, University of California</s1>
<s2>Santa Barbara, CA 93106</s2>
<s3>USA</s3>
<sZ>12 aut.</sZ>
<sZ>13 aut.</sZ>
<sZ>14 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Santa Barbara, CA 93106</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">10-0090389</idno>
<date when="2010">2010</date>
<idno type="stanalyst">PASCAL 10-0090389 INIST</idno>
<idno type="RBID">Pascal:10-0090389</idno>
<idno type="wicri:Area/Main/Corpus">004A05</idno>
<idno type="wicri:Area/Main/Repository">003757</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0268-1242</idno>
<title level="j" type="abbreviated">Semicond. sci. technol.</title>
<title level="j" type="main">Semiconductor science and technology</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compounds</term>
<term>Crystal growth</term>
<term>Experimental study</term>
<term>Indium Nitrides</term>
<term>MOCVD</term>
<term>Molecular beam epitaxy</term>
<term>Nonlinear optics</term>
<term>Optical materials</term>
<term>Optical polarization</term>
<term>Optical rectification</term>
<term>Radiation sources</term>
<term>THz range</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Rectification optique</term>
<term>Source rayonnement</term>
<term>Optique non linéaire</term>
<term>Etude expérimentale</term>
<term>Epitaxie jet moléculaire</term>
<term>Méthode MOCVD</term>
<term>Croissance cristalline</term>
<term>Domaine fréquence THz</term>
<term>Polarisation optique</term>
<term>Matériau optique</term>
<term>Composé binaire</term>
<term>Indium Nitrure</term>
<term>0757H</term>
<term>InN</term>
<term>8115</term>
<term>4265</term>
<term>4270N</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">We have investigated the characteristics of THz generation including the dependence of the output power and polarization on the incident angle and pump polarization from two series of InN films grown by plasma-assisted molecular beam epitaxy (PAMBE) and metal organic chemical vapor deposition (MOCVD), respectively. Following the analyses of our results, we have attributed the mechanism of the THz generation from these InN samples to the destructive interference between optical rectification and photocurrent surge. Under the average intensity of 176 W cm-<sup>2</sup>
 for the subpicosecond laser pulses at 782 nm, the THz output powers were measured to be as high as 2.4 μW from the 220 nm InN film, with the output frequencies spanning the band from 300 GHz to 2.5 THz.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0268-1242</s0>
</fA01>
<fA02 i1="01"><s0>SSTEET</s0>
</fA02>
<fA03 i2="1"><s0>Semicond. sci. technol.</s0>
</fA03>
<fA05><s2>25</s2>
</fA05>
<fA06><s2>1</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>THz generation from InN films due to destructive interference between optical rectification and photocurrent surge</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>GUIBAO XU</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>DING (Yujie J.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>HONGPING ZHAO</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>GUANGYU LIU</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>JAMIL (Muhammad)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>TANSU (Nelson)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>ZOTOVA (Ioulia B.)</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>STUTZ (Charles E.)</s1>
</fA11>
<fA11 i1="09" i2="1"><s1>DIGGS (Darnell E.)</s1>
</fA11>
<fA11 i1="10" i2="1"><s1>FERNELIUS (Nils)</s1>
</fA11>
<fA11 i1="11" i2="1"><s1>KEN HOPKINS (F.)</s1>
</fA11>
<fA11 i1="12" i2="1"><s1>GALLINAT (Chad S.)</s1>
</fA11>
<fA11 i1="13" i2="1"><s1>KOBLMÜLLER (Gregor)</s1>
</fA11>
<fA11 i1="14" i2="1"><s1>SPECK (James S.)</s1>
</fA11>
<fA14 i1="01"><s1>Department of Electrical and Computer Engineering, Lehigh University</s1>
<s2>Bethlehem, PA 18015</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>ArkLight, PO Box 2</s1>
<s2>Center Valley, PA 18034</s2>
<s3>USA</s3>
<sZ>7 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB</s1>
<s2>OH 45433</s2>
<s3>USA</s3>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>11 aut.</sZ>
</fA14>
<fA14 i1="04"><s1>Materials Department, University of California</s1>
<s2>Santa Barbara, CA 93106</s2>
<s3>USA</s3>
<sZ>12 aut.</sZ>
<sZ>13 aut.</sZ>
<sZ>14 aut.</sZ>
</fA14>
<fA20><s2>015004.1-015004.5</s2>
</fA20>
<fA21><s1>2010</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>21041</s2>
<s5>354000189186080050</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2010 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>17 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>10-0090389</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Semiconductor science and technology</s0>
</fA64>
<fA66 i1="01"><s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>We have investigated the characteristics of THz generation including the dependence of the output power and polarization on the incident angle and pump polarization from two series of InN films grown by plasma-assisted molecular beam epitaxy (PAMBE) and metal organic chemical vapor deposition (MOCVD), respectively. Following the analyses of our results, we have attributed the mechanism of the THz generation from these InN samples to the destructive interference between optical rectification and photocurrent surge. Under the average intensity of 176 W cm-<sup>2</sup>
 for the subpicosecond laser pulses at 782 nm, the THz output powers were measured to be as high as 2.4 μW from the 220 nm InN film, with the output frequencies spanning the band from 300 GHz to 2.5 THz.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B00G57H</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B80A15</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B40B65</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B40B70N</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Rectification optique</s0>
<s5>03</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Optical rectification</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Source rayonnement</s0>
<s5>11</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Radiation sources</s0>
<s5>11</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Optique non linéaire</s0>
<s5>17</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Nonlinear optics</s0>
<s5>17</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Etude expérimentale</s0>
<s5>29</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Experimental study</s0>
<s5>29</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0>
<s5>30</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0>
<s5>30</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Méthode MOCVD</s0>
<s5>31</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>MOCVD</s0>
<s5>31</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Croissance cristalline</s0>
<s5>32</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Crystal growth</s0>
<s5>32</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Domaine fréquence THz</s0>
<s5>37</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>THz range</s0>
<s5>37</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Polarisation optique</s0>
<s5>41</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Optical polarization</s0>
<s5>41</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Matériau optique</s0>
<s5>57</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Optical materials</s0>
<s5>57</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Composé binaire</s0>
<s5>61</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Binary compounds</s0>
<s5>61</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Indium Nitrure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>62</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Indium Nitrides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>62</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>0757H</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>InN</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>8115</s0>
<s4>INC</s4>
<s5>85</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>4265</s0>
<s4>INC</s4>
<s5>86</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>4270N</s0>
<s4>INC</s4>
<s5>87</s5>
</fC03>
<fN21><s1>060</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 003757 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 003757 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    RBID
   |clé=     Pascal:10-0090389
   |texte=   THz generation from InN films due to destructive interference between optical rectification and photocurrent surge
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

THz generation from InN films due to destructive interference between optical rectification and photocurrent surge

THz generation from InN films due to destructive interference between optical rectification and photocurrent surge

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri